a 1n 6263 small signal schottky diode description metal to silicon junction diode featuring high break- down, low turn-on voltage and ultrafast switching. primarly intended for high level uhf/vhf detection and pulse application with broad dynamic range. november 1994 do 35 (glass) symbol parameter value unit v rrm repetitive peak reverse voltage 60 v i f forward continuous current* t a = 25 c 15 ma i fsm surge non repetitive forward current* t p 1s 50 ma t stg t j storage and junction temperature range - 65 to 200 - 65 to 200 c t l maximum lead temperature for soldering during 10s at 4mm from case 230 c absolute ratings (limiting values) symbol test conditions value unit r th(j-a) junction-ambient* 400 c/w thermal resistance * on infinite heat sink with 4mm lead length ** pulse test: t p 300 m s d < 2% . matched batches available on request. test co nditions (f orward voltage and/or capac itance) according to customer specification. symbol test conditions min. typ. max. unit v br t amb = 25 ci r = 10 m a 60 v v f * * t amb = 25 ci f = 1ma 0.41 v t amb = 25 ci f = 15ma 1 i r * * t amb = 25 cv r = 50v 0.2 m a static characteristics electrical characteristics symbol test conditions min. typ. max. unit c t amb = 25 cv r = 0v f = 1mhz 2.2 pf t t amb = 25 ci f = 5ma krakauer method 100 ps dynamic characteristics 1/3
2/3 fig.1 : forward current versus forward voltage (typical values). fig.2 : capacitance c versus reverse applied voltage v r (typical values). fig.3 : reverse current versus ambient temperature. fig.4 : reverse current versus continuous reverse voltage (typical values). 1n 6263
cooling method : by convection and conduction marking: clear, ring at cathode end. weight: 0.15g package mechanical data do 35 glass note 2 ba b c note 1 note 1 d d o / o / o / e e ref. dimensions notes millimeters inches min. max. min. max. a 3.050 4.500 0.120 0.117 1 - the lead diameter ? d is not controlled over zone e 2 - the minimum axial lengh within which the device may be placed with its leads bent at right angles is 0.59"(15 mm) b 12.7 0.500 ? c 1.530 2.000 0.060 0.079 ? d 0.458 0.558 0.018 0.022 e 1.27 0.050 information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelec tronics. specifications mentioned in this publication are subject to change without not ice. this publication supersedes and replaces all informat ion previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devi ces or systems wit hout express written approval of sgs-thomson microelectronics. ? 1994 sgs-thomson microelectronics - printed in italy - all rights reserved. sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands singapore - spain - sweden - switzerland - taiwan - united kingdom - u.s.a. 3/3 1n 6263
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